Revista Eletrônica de Potência (Brazilian Journal of Power Electronics)

Palavras Chaves: Capacitância Miller, Modelo Analítico, Perdas de comutação

Resumo

Este artigo apresenta um modelo analítico simples e acurado para cálculo de perdas em MOSFETs de potência. Uma análise comparativa entre o modelo proposto e modelos comumente utilizados na literatura é mostrado. O modelo proposto utiliza uma simplificação na modelagem das cargas das capacitâncias parasitas. Variações da temperatura de junção com a variação da frequência são consideradas. Resultados térmicos obtidos experimentalmente são usados para validar o modelo em frequências de até 300 kHz. Os resultados demonstram acurácia do modelo proposto usando dois part numbers de MOSFETs diferentes, com as tecnologias de superjunção e Silício convencional. Devido à acurácia e simplicidade de implementação, este modelo é recomendado para utilização em análises onde são verificados extensivos pontos de operação (tensão, frequência e potência), algorítimos genéticos e aplicações com banco de dados.

Title: ANALYTICAL MODEL FOR THE CALCULATION OF LOSSES IN POWER MOSFETS FOR DATABASE APPLICATIONS

Keywords: Analytical Model, Miller capacitance, Switching Losses

Abstract

This work presents a simple and accurate analytical model for power MOSFET loss calculation. A comparative analysis among commonly used methods in the literature and the proposed approach is presented. The proposed model uses a simplification of the charge behavior of MOSFET parasitic capacitances. Junction temperature variation with frequency is considered. Thermal measurements are used to validate the model up to 300 kHz. Results demonstrate the accuracy of the proposed model using two different MOSFET part numbers, of superjunction and conventional silicon technology. Due to the accuracy and simplicity of the model, it is recommended for use in analyses where many operating points are tested (voltage, frequency, power), genetic algorithms, and database applications.

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