Revista Eletrônica de Potência (Brazilian Journal of Power Electronics)

Title: An Fpga-based Single-phase Interleaved Boost-type Pfc Rectifier Employing Gan Hemt Devices

Keywords: Digital control implementation, Gallium Nitride semiconductors, Power Factor Correction, Very high switching frequency

Abstract

The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. However, the new generation power semiconductors create new challenges to Power Electronics design that include: circuit layout to reduce parasitics, very high frequency digital control implementation, electromagnetic compatibility, passive components design, among others. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction converter in order to evaluate some of the GaN devices challenges. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, experimental results verify the feasibility of the developed digital feedback control scheme and laboratory prototype.

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