Revista Eletrônica de Potência (Brazilian Journal of Power Electronics)

Palavras Chaves: Associação em série, circuito de disparo, IGBTs, inversores de média tensão, tiristores, TO-247

Resumo

A utilização de IGBTs conectados em série ainda é um tema atual na literatura, a despeito de sua discussão ter se iniciado na década de 90. É intrigante que, apesar dos inúmeros estudos acadêmicos, atualmente não existam produtos comerciais disponíveis dentro do mercado de inversores de média tensão (até 4,16kV) e menor potência (até 1MW), utilizando essa tecnologia. Esse fato está relacionado com a dificuldade de garantir o compartilhamento dinâmico e estático de tensão entre IGBTs, originando circuitos de disparo complexos e com custo relativo elevado, se comparado com os componentes que esses pretendem comandar. Dessa forma, o presente artigo visa apresentar uma alternativa simples e de baixo custo, entretanto, efetiva para o disparo de IGBTs de baixa tensão associados em série, especificamente para o modelo de encapsulamento TO-247. São apresentados resultados experimentais mostrando os comportamentos da solução em várias condições operacionais.

Title: Integrated Solution for Driving Series Connected IGBTs Based on Typical Th yristors Gate Drive Circuit

Keywords: gate driver, IGBTs, medium voltage inverters, Series connected, thyristors, TO-247

Abstract

The use of series connected IGBTs is still a current subject in literature, despite such discussion having started in the 1990s. Though countless academic studies, there are currently no available commercial products on the market for medium voltage inverters (up to 4.16kV) and lower power (up to 1MW) using this technology. This is related to the difficulty of ensuring the dynamic and static voltage sharing between IGBTs, giving rise to relatively expensive complex firing circuits, when compared to the components they intend to control. Therefore, this article aims to present a simple and low-cost alternative, still effective for driving low voltage series-connected IGBTs, specifically for the encapsulation TO-247 type. Experimental results are presented showing the behavior of the solution under several operating conditions.

[1] P. R. Palmer, A. N. Githiari, “The series connection of IGBTs with optimised voltage sharing in the switching transient”, in Power Electronics Specialists Conference, PESC’95, IEEE, vol. 1, pp. 44-49, Junho 1995.
[2] S. Hong, V. Chitta, D. A. Torrey, “Series connection of IGBT’s with active voltage balancing”, IEEE Transactions on Industry Applications, vol. 35, pp. 917-923, Junho/Agosto 1999.
[3] M. Bruckmann, R. Sommer, M. Fasching, J. Sigg, “Series connection of high voltage IGBT modules”, In Industry Applications Conference, Thirty-Third IAS Annual Meeting, IEEE, vol. 2, pp. 1067-1072, Outubro 1998.
[4] P. R. Palmer, H. S. Rajamani, N. Dutton, “Experimental comparison of methods of employing IGBTs connected in series”, Proceedings Electric Power Applications, IEEE, vol. 151, pp. 576-582, Setembro 2004.
[5] N. Y. A. Shammas, R. Withanage, D. Chamund, “Review of series and parallel connection of IGBTs”, Proceedings Circuits, Devices and Systems, IEEE, vol. 153, pp. 34-39, Fevereiro 2006.
[6] S. Hong, G. Lee, “Active gate control strategy of series connected IGBTs for high power PWM inverter”, IEEE Transactions on Industry Applications, vol. 35, pp. 917-923, Julho 1999
[7] C. Abbate, G. Busatto, F. Lannuzzo, “High-voltage, high-performance switch using series-connected IGBTs”, IEEE Transactions on Power Electronics, vol. 25, pp. 2450-2459, Abril 2010.
[8] M. Mazuela, I. Baraia, A. Sanchez-Ruiz, I. Echeverria, I. Torre, I. Atutxa, “Simple Voltage Balancing Method to Protect Series-Connected Devices Experimentally Verified in a 5L-MPC Converter”, IEEE Transactions on Industrial Electronics, vol. 65, pp. 3699-3707, Outubro 2018.
[9] F. Zhang, X. Yang, Y. Ren, L. Feng, W. Chen, Y. Pei, “A hybrid active gate drive for switching loss reduction and voltage balancing of series-connected IGBTs”, IEEE Transactions on Power Electronics, vol. 32, pp. 7469-7481, Dezembro 2016.
[10] I. Baraia, J. A. Barrena, G. Abad, J. M. C. Segade, U. Iraola, “An experimentally verified active gate control method for the series connection of IGBT/diodes”, IEEE Transactions on Power Electronics, vol. 27, pp. 1025-1038, Julho 2012.
[11] T. C. Lim, B. W. Williams, S. J. Finney, P. R. Palmer, “Series-connected IGBTs using active voltage control technique”, IEEE Transactions on Power Electronics, vol. 28, pp. 4083-4103, Novembro 2012.
[12] X. Yang, J. Zhang, W. He, Z. Long, P. R. Palmer, “Physical investigation into effective voltage balancing by temporary clamp technique for the series connection of IGBTs”, IEEE Transactions on Power Electronics, vol. 33, pp. 248-258, Fevereiro 2017.
[13] J. Zhang, P. Palmer, X. Zhang, W. He, “Analysis of an effective voltage sharing method for IGBTs connected in series”, IECON 2014-40th Annual Conference of the Industrial Electronics Society, IEEE, pp. 1261-1269, Novembro 2014.
[14] A. Piazzesi, L. Meysenc, “Series connection of 3.3 kV IGBTs with active voltage balancing”. IEEE 35th Annual Power Electronics Specialists Conference, vol. 2, pp. 893-898, Junho 2004.
[15] Y. Wang, M. A. Khaizaran, P. R. Palmer, “Controlled switching of high voltage IGBTs in series”, IEEE Conference on Electron Devices and Solid-State Circuits, pp. 297-300, Abril 2004.
[16] C. Gerster, “Fast high-power/high-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing”, Applied Power IEEE Electronics Conference and Exposition, IEEE, pp. 469-472, Fevereiro 1994.
[17] S. Ji, T. Lu, Z. Zhao, H. Yu, L. Yuan, “Series-connected HV-IGBTs using active voltage balancing control with status feedback circuit”, IEEE Transactions on Power Electronics, vol. 30, pp. 4165-4174, Setembro 2014.
[18] Y. Abe, K. Maruyama, “Multi-series connection of high-voltage IGBTs”, Fugi Electric Journal, vol. 75, pp. 1-4, 2002.
[19] T. Nguyen, P. O. Jeannin, E. Vagnon, D. Frey, J. C. Crebier, “Series connection of IGBT”, in Applied Power Electronics Conference and Exposition (APEC), IEEE, pp. 2238-2244, 2010.
[20] T. C. Lim, B. W. Williams, S. J. Finney, “Active snubber energy recovery circuit for series-connected IGBTs”, IEEE Transactions on Power Electronics, vol. 26, pp. 1879-1889, Novembro 2010.
[21] L. Yang, P. Fu, X. Yao, J. Wang, “A module based self-balanced series connection for IGBT”, Energy Conversion Congress and Exposition, IEEE, pp. 1953-1958, Novembro 2014.
[22] S. Brehaut, F. Costa, “Gate driving of high power IGBT through a Double Galvanic Insulation Transformer”, in IEEE Industrial Electronics, IECON 2006-32nd Annual Conference, pp. 2505-2510, Abril 2007.
[23] P. R. Palmer, A. N. Githiari, R. J. Leedham, “A comparison of IGBT technologies for use in the series connection”, Power Electronics and Variable Speed Drives Conference, IEEE, pp. 236-241, Agosto 1996.
[24] A. Consoli, S. Musumeci, G. Oriti, A. Testa, “Active voltage balancement of series connected IGBTs”, Industry Applications Conference Thirtieth IAS Annual Meeting, IEEE, vol. 3, pp. 2752-2758, Outubro 1995.
[25] H. L. Hess, R. J. Baker, “Transformerless capacitive coupling of gate signals for series operation of power MOS devices”, Transactions on power electronics, IEEE, vol. 15, pp. 923-930, Setembro 2000.
[26] B. Maurice, L. Wuidart, “Drive circuits for power MOSFETs and IGBTs”, ST Microelectronics Application notes, www.st.com.
[27] P. Münster, R. Schräder, Q. T. Tran, S. Gierschner, H. G. Eckel, “Influence of gate structures and electrical boundary conditions on self turn-on of HV IGBTs”, 19th European Conference on Power Electronics and Applications, IEEE, pp. P-1, Setembro 2017.
[28] H. Feng, W. Yang, Y. Onozawa, T. Yoshimura, A. Tamenori, J. K. Sin, “Transient turn-ON characteristics of the fin p-body IGBT”, IEEE Transactions on Electron Devices, vol. 62, PP. 2555-2561, Julho 2015.
[29] I. Omura, H. Ohashi, W. Fichtner, “IGBT negative gate capacitance and related instability effects”. IEEE Electron Device Letters, vol. 18, PP. 622-624, Dezembro 1997.
[30] J. Böhmer, J. Schumann, H. G. Eckel, “Negative differential miller capacitance during switching transients of IGBTs”, 14th European Conference on Power Electronics and Applications, IEEE, pp. 1-9, Setembro 2011.
[31] D. Chiola, H. Husklen, “1200V HighSpeed 3: IGBT A new IGBT family optimized for high-switching speed”, AN-IGBT-09-2013-V1.1-EN-019, www.infineon.com., 2013.
[32] S. Tominaga, H. Urushibata, H. Fujita, H. Akagi, T. Horiguchi, S. I. Kinouchi, “Modeling of IGBTs with focus on voltage dependency of terminal capacitances”, Proceedings of the 2011 14th European Conference on Power Electronics and Applications. IEEE, Setembro 2011.
[33] Raël, S., Davat, B., “A physics-based modeling of interelectrode MOS capacitances of power MOSFET and IGBT”, IEEE Transactions on Power Electronics, v. 23, n. 5, p. 2585-2594, Novembro 2008.
[34] Wintrich, U. Nicolai, W. Tursky, “Application Manual Power Semiconductors”, Semikron International GmbH, 2011.